Photothermolysis 10.6μm Infrared from China manufacturer - Beijing Globalipl Development Co.,Ltd

Place of Origin:

Beijing, China (Mainland)


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Product Detail

Model No.: US806

Photothermolysis 10.6μm Infrared Co2 Fractional Laser Beauty Machine US806
I.Theory
This technology

Photothermolysis 10.6μm Infrared Co2 Fractional Laser Beauty Machine US806

I.Theory

This technology is known as Fractional Photothermolysis theory (dot-matrix light and heat decomposition), the 10.6μm far-infrared laser will evenly mark with tiny holes, and then cause a series biochemical reactions inside the skin, thus to reach the results of skin lifting & resurfacing, pigments and scar removal, etc, finally let the skin return to young again.

II.Applications:

1. Skin renewing and resurfacing

2. Wrinkle removal, skin tightening

3. Acne and acne scar removal

4. Smooth burnt scars and surgery scars, etc

5. Remove intractable chloasmas and pigmentation

6. Sun damage recovery

III.Features:

1. 1. RF Coherent co2 fractional Laser(Safe, precise, and powerful fast treatment)

2. Individual design of laser structure, greatly facility laser replacement and easy daily manintenace

3. Display: 8.4" color touch LCD screen

4. Humanized software control, stable laser output, more safety

5. Smart articular arm, high accuracy

6. Excellent performance, not affect people's normal life and study

7. Packing: aluminum alloy case

IV.Parameters:

Basic specification
Wavelength	10.6μm, far-infrared laser
Control	LCD 8.4 inch
Pulse frequency	33.3 Hz
Duration	0.1~10 ms
Distance	0.1~2.6 mm
Interval	0~6s
Repeat	1~5000ms
overlap	1~20 times
Average power	40W
Working mode:	Continuous pulse, single pulse, interval pulse
Scan Graphics	Square, rectangle, round, triangle, oval, 6-diamond shape, line
Dot quantity	400 dots at most
Working state	Hyper-pulsed mode
Scan mode	Sequence scan, Random scan, maximum distance scan
Pulse energy	10mj to 130mj is optional for each dot.
Technical specification
Condenser focus	f=50mm
Beam divergence angle	0.3 mrad
Spot size	0.1 mm
Aiming beam	Less than 2mW, 635nm red semiconductor laser
Cooling system	air cooling
Environment temperature	5-40⁰C
Relative humidity	80%
Temperature in transit	-40-50⁰C
Humidity in transit	85%
Beam transport device	Articulated arm with 7-joint and balance weight
Atmospheric pressure	86.0kpa-106.0kpa
Warming up time	2 min
Electromagnetic requirement	No electromagnetic
Electromagnetic requirement	Field interference
N. weight (kg)	45kg
Power supply	220V/110V